APTGT50SK170T1G APTGT50SK170T1G ? rev 0 august, 2007 www.microsemi.com 1 ? 5 7 cr1 cr2 8 12 4 3 ntc 12 56 q1 11 pins 1/2 ; 3/4 ; 5/6 must be shorted together absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1700 v t c = 25c 75 i c continuous collector current t c = 80c 50 i cm pulsed collector current t c = 25c 100 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 312 w rbsoa reverse bias safe operating area t j = 125c 100a @ 1600v these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. see application note apt0502 on www.microsemi.com application ? ac and dc motor control ? switched mode power supplies features ? trench + field stop igbt ? technology - low voltage drop - low tail current - switching frequency up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - rbsoa and scsoa rated ? very low stray inductance ? internal thermistor for temperature monitoring ? high level of integration benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? rohs compliant buck chopper trench + field stop igbt ? power module v ces = 1700v i c = 50a @ tc = 80c
APTGT50SK170T1G APTGT50SK170T1G ? rev 0 august, 2007 www.microsemi.com 2 ? 5 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 1700v 250 a t j = 25c 2.0 2.4 v ce(sat) collector emitter saturation voltage v ge = 15v i c = 50a t j = 125c 2.4 v v ge(th) gate threshold voltage v ge = v ce , i c = 1ma 5.0 5.8 6.5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 400 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 4400 c oes output capacitance 180 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 150 pf t d(on) turn-on delay time 370 t r rise time 40 t d(off) turn-off delay time 650 t f fall time inductive switching (25c) v ge = 15v v bus = 900v i c = 50a r g = 10 ? 180 ns t d(on) turn-on delay time 400 t r rise time 50 t d(off) turn-off delay time 800 t f fall time inductive switching (125c) v ge = 15v v bus = 900v i c = 50a r g = 10 ? 300 ns e on turn-on switching energy t j = 125c 16 e off turn-off switching energy v ge = 15v v bus = 900v i c = 50a r g = 10 ? t j = 125c 15 mj chopper diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1700 v t j = 25c 250 i rm maximum reverse leakage current v r =1700v t j = 125c 500 a i f dc forward current tc = 80c 50 a t j = 25c 1.8 2.2 v f diode forward voltage i f = 50a t j = 125c 1.9 v t j = 25c 385 t rr reverse recovery time t j = 125c 490 ns t j = 25c 14 q rr reverse recovery charge t j = 125c 23 c t j = 25c 6 e r reverse recovery energy i f = 50a v r = 900v di/dt =800a/s t j = 125c 12 mj
APTGT50SK170T1G APTGT50SK170T1G ? rev 0 august, 2007 www.microsemi.com 3 ? 5 thermal and package characteristics symbol characteristic min typ max unit igbt 0.40 r thjc junction to case thermal resistance diode 0.70 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 3500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 2.5 4.7 n.m wt package weight 80 g temperature sensor ntc (see application note apt0406 on www.microsemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? b 25/85 t 25 = 298.15 k 3952 k ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? = t t b r r t 1 1 exp 25 85 / 25 25 sp1 package outline (dimensions in mm) see application note 1904 - mounting instructions for sp1 power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t
APTGT50SK170T1G APTGT50SK170T1G ? rev 0 august, 2007 www.microsemi.com 4 ? 5 typical performance curve output characteristics (v ge =15v) t j =25c t j =125c 0 20 40 60 80 100 00.511.522.533.54 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =20v v ge =9v 0 20 40 60 80 100 012345 v ce (v) i c (a) t j = 125c transfert characteristics t j =25c t j =125c t j =125c 0 20 40 60 80 100 5678910111213 v ge (v) i c (a) energy losses vs collector current eon eoff er 0 10 20 30 40 50 0 20406080100 i c (a) e (mj) v ce = 900v v ge = 15v r g = 10 ? t j = 125c eon eoff er 0 10 20 30 40 50 0 1020304050607080 gate resistance (ohms) e (mj) v ce = 900v v ge =15v i c = 50a t j = 125c switching energy losses vs gate resistance reverse bias safe operating area 0 25 50 75 100 125 0 400 800 1200 1600 2000 v ce (v) i c (a) v ge =15v t j =125c r g =10 ? maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) igbt
APTGT50SK170T1G APTGT50SK170T1G ? rev 0 august, 2007 www.microsemi.com 5 ? 5 forward characteristic of diode t j =25c t j =125c t j =125c 0 10 20 30 40 50 60 70 80 90 100 0 0.5 1 1.5 2 2.5 3 v f (v) i f (a) hard switching zcs zvs 0 5 10 15 20 25 30 0 1020304050607080 i c (a) fmax, operating frequency (khz) v ce =900v d=50% r g =10 ? t j =125c t c =75c operating frequency vs collector current maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) diode microsemi reserves the right to change, without notice, the specifications and info rmation contained herein microsemi's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
|
